Latest power devices for photovoltaic inverters

Autor:	N. Eguchi, A. Otsuki, Y. Takahashi, T. Fujihira, T. Ide, M. Kawano
Rok vydání:	2012
Předmět:	business.industry Computer science Power module Photovoltaic system MOSFET Electronic engineering Grid-connected photovoltaic power system Electrical engineering Power semiconductor device Insulated-gate bipolar transistor business Maximum power point tracking Power (physics)
Zdroj:	ISIE
DOI:	10.1109/isie.2012.6237363
Popis:	Excellent electrical properties of latest power devices for improving the efficiency of PV inverters are presented. Power modules using SiC-MOSFET and -SBD exhibit the possibility to realize PV inverters with peak efficiency beyond 99.0%. Silicon IGBT modules using RB-IGBT have enabled to mass-produce PV inverters with peak efficiency of 98.4%. Silicon SJ-MOSFET and discrete IGBT have enabled to improve the efficiency of small power PV inverters by 0.5 point.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aa238015e00e7fc74a6fd96570ad13f3 https://doi.org/10.1109/isie.2012.6237363 Zobrazit plný text záznamu