A memristor based on two-dimensional MoSe2/MoS2 heterojunction for synaptic device application

Autor:	Ping Liu, Huiming Luo, Xiaomiao Yin, Xingfu Wang, Xuemin He, Jiangwei Zhu, Hongtao Xue, Weiwei Mao, Yong Pu
Rok vydání:	2022
Předmět:	Physics and Astronomy (miscellaneous)
Zdroj:	Applied Physics Letters. 121:233501
ISSN:	1077-3118 0003-6951
Popis:	Two-dimensional materials are promising for exploring memristors with excellent performance. However, the memristor still faces challenges in insufficient reliability due to resistance-switching mechanisms of conductive filaments. In this work, a typical metal/heterojunction/metal structure (Ag/MoSe2/MoS2/Au/Ti) was proposed as the device architecture of the memristor. The device exhibits stable bipolar resistive switching behavior with a high on–off ratio, long retention time, and good endurance. The resistance-switching is achieved by adjusting the interface barrier of the MoSe2/MoS2 due to the band modulation. Moreover, we explore the essential synaptic functions of this memristor device, with outstanding voltage pulse potentiation and depression. Our work highlights the significant prospects of MoSe2/MoS2 heterojunction in artificial synapses and neural networks.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aa22eee2acf86774b6b8d928e2b22d2a https://doi.org/10.1063/5.0127880 Zobrazit plný text záznamu