| Autor: |
Wolfgang J. Choyke, N.J. Doyle, J.A. Spitznagel, R.B. Irwin |
| Rok vydání: |
1985 |
| Předmět: |
|
| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :287-292 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/0168-583x(85)90567-1 |
| Popis: |
This study has explored the role of interstitial oxygen concentration and oxide precipitation on the mechanical response of ion implanted single crystal silicon surfaces. Samples of FZ, CZ and web silicon have been implanted with 50 keV to 150 keV hydrogen ions to fluences of 8 × 10 16 H + /cm 2 to 8 × 10 17 H + /cm 2 at temperatures from 300 K to 650 K. Optical microscopy and surface profilometry have been used to measure blister and crater densities arising from implantation induced stresses and/or hydrogen gas pressure. The formation of oxygen denuded zones and oxide precipitates prior to implantation are shown to have a pronounced effect on the mechanical behaviour of the surface during ion implantation. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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