Evaluation of HNO3 Doping in Graphene/Silicon Solar Cells by Means of Capacitance - Voltage Curves and Impedance Spectroscopy

Autor:	Matacena, I., Lancellotti, L., Guerriero, P., Bobeico, E., Lisi, N., Delli Veneri, P., Daliento, S.
Jazyk:	angličtina
Rok vydání:	2022
Předmět:	New Materials Devices and Conversion Concepts Evolving and Emerging Technologies: Tandems Thin Film absorbers III-V New Materials and Concepts Advanced Modelling
DOI:	10.4229/wcpec-82022-2bv.2.15
Popis:	8th World Conference on Photovoltaic Energy Conversion; 409-411 The aim of this work is the study of beneficial effects of HNO3 doping for G/Si SJSCs by means of capacitance versus voltage (C-V) curves and impedance spectroscopy characterizations. Capacitance curves in forward bias allowed to characterize defects distribution at graphene/silicon interface, proving induced defect passivation of molecular doping. Impedance spectra both at reverse and forward bias enforced achieved results. Degradation after storing the solar cell in air was also monitored using the same techniques. AC analyses performed were confirmed by dark current-voltage (I-V) curves collected before doping, after doping and 2 weeks after doping storing cell in air.
Databáze:	OpenAIRE
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