Direction heterolasers based on GaInPAs/InP
| Autor: | L. M. Dolginov, E G Shevchenko, P. G. Eliseev, A. P. Bogatov, M. G. Mil'vidskii, B. N. Sverdlov, A E Drakin, V. V. Bezotosnyi |
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| Rok vydání: | 1984 |
| Předmět: |
Materials science
business.industry Physics::Optics Heterojunction Substrate (electronics) Semiconductor device Laser Epitaxy Atomic and Molecular Physics and Optics Semiconductor laser theory law.invention Condensed Matter::Materials Science law Optoelectronics business Engineering (miscellaneous) Lasing threshold Refractive index |
| Zdroj: | Journal of Soviet Laser Research. 5:324-348 |
| ISSN: | 1573-8760 0270-2010 |
| DOI: | 10.1007/bf01120624 |
| Popis: | Results are presented of investigations of the isoperiodic system GaInPAs/InP and of heterolasers on its basis. Schemes are presented for interpolation of the basic band parameters and of the refractive index of the GaInPAs solid solution, which is isoperiodic with InP. Optimal methods of growing heterostructures based on the solid solution GaInPAs by the method of heterophase epitaxy are determined. The temperature dependence of the threshold current in heterolasers based on the system GaInPAs/InP is investigated in the wavelength range 1–1.7 μm. The emitting properties of lasers on this basis are studied. A new type of planar laser is developed, namely a buried mesa-planar laser GaInPaAs/InP heterostructure grown on a p-type substrate and emitting at a wavelength 1.3 μm. These lasers are characterized by a low level of threshold current at room temperature (down to 30 mA for the better samples), and linearity of the current-voltage characteristics and of the single-mode lasing regime, when working in the cw mode, is preserved up to appreciable excess above the threshold current. |
| Databáze: | OpenAIRE |
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