Investigation of leakage current in pinned photodiode CMOS imager pixel with negative transfer-gate bias operation
| Autor: | Takeshi Kamino, Motoaki Tanizawa, Yosuke Takeuchi, Yasuo Yamaguchi, Masatoshi Kimura, Tatsuya Kunikiyo |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Physics
Pixel Silicon business.industry ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION chemistry.chemical_element Insulator (electricity) Hardware_PERFORMANCEANDRELIABILITY Photodiode law.invention Computer Science::Hardware Architecture Computer Science::Emerging Technologies CMOS chemistry law Logic gate Hardware_INTEGRATEDCIRCUITS Optoelectronics Image sensor business Hardware_LOGICDESIGN Dark current |
| Zdroj: | 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). |
| DOI: | 10.1109/sispad.2015.7292262 |
| Popis: | The characteristics of leakage current observed in the pixels of pinned photodiode CMOS image sensor with negative transfer-gate bias operation are investigated, taking metal contamination into account. Simulation results show that interface states between insulator and the pinned layer in the vicinity of transfer gate, acting as hole traps, are responsible for negative transfer-gate bias dependence of the dark current. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|