GaN-on-Si Power Technology: Devices and Applications
| Autor: | Yifeng Wu, Kevin J. Chen, Alex Lidow, Oliver Häberlen, Yasuhiro Uemoto, Chun lin Tsai, Tetsuzo Ueda |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Computer science business.industry Electrical engineering Gallium nitride 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Commercialization Electronic Optical and Magnetic Materials Power (physics) chemistry.chemical_compound Reliability (semiconductor) chemistry Logic gate Power electronics 0103 physical sciences MOSFET Power semiconductor device Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | IEEE Transactions on Electron Devices. 64:779-795 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2017.2657579 |
| Popis: | In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparisonwith other competingpower device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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