Research of FIB local milling processes for creation of nanosized field emission structures
| Autor: | I V Panchenko, N A Shandyba, A S Kolomiytsev |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Journal of Physics: Conference Series. 2086:012201 |
| ISSN: | 1742-6596 1742-6588 |
| DOI: | 10.1088/1742-6596/2086/1/012201 |
| Popis: | The paper presents the results of experimental studies of the influence of the main parameters of a focused ion beam (FIB) during surface profiling on the accuracy of transfer of a pattern to a silicon substrate to create nanoscale field emission structures. In this work, the optimal FIB currents are determined, introducing a minimum amount of distortions during the formation of structures of various sizes. The possibilities of the method of local ion-beam etching of structures in a wide range from 0.1 to 2 μm are shown. The prospects of using this technology for the creation of field emission structures have been demonstrated. It is determived the current-voltage characteristic of the fabricated field-emission cells with a threshold voltage of the onset of emission of ∼ 2.5 V and a maximum current of 300 nA at 30 V. |
| Databáze: | OpenAIRE |
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