| Popis: |
Nanoscale periodic and quasiperiodic relieves on fused quartz are of interest for the creation of a variety of optical and electronic devices such as phase masks, one- and two-dimensional stamps for nanoimprint and wide-band antireflection structures. The authors of this paper have developed a method of interference lithography to pattern nanoscale relief on quartz with a high-power pulsed XeCl laser with high-quality output radiation at wavelength 308nm. One of the advantages of the proposed technique is the significantly smaller influence of mechanical oscillations in an optical setup on the results of nanoscale modification. The relief on quartz was formed with the use of a complete cycle of lithography. As the mask, a two-layer structure of a copper film of 50nm in thickness and a photoresist of 400nm in thickness were employed. The mask pattern was formed by exposure of a photoresist by two radiation beams of a XeCl laser with energy density ~ 30mJ/cm 2 , aqueous-alkali development of a photoresist, and copper etching by the ion beam (Ar + ). Quartz was etched by the method of ion-beam reactive etching in a flow of CF 4 - O 2 (20%) gas mixture, with etching rate 30nm/min. |
