Ga-doped ZnO films magnetron sputtered at ultralow discharge voltages: Significance of controlling defect generation
| Autor: | Feng Huang, Yuyun Chen, Xu Genbao, Fangfang Ge, Fanping Meng |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Oxide 02 engineering and technology 01 natural sciences symbols.namesake chemistry.chemical_compound 0103 physical sciences Materials Chemistry Thin film Deposition (law) 010302 applied physics business.industry Doping Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology Microstructure Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Transmission electron microscopy Cavity magnetron symbols Optoelectronics 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Thin Solid Films. 660:840-845 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2018.03.019 |
| Popis: | In magnetron sputtered oxide thin films, both the structure and physical properties are affected by bombardment-induced defects and their annihilation. Ga-doped zinc oxide (GZO) films with low Ga content (~1.7 at.%) were magnetron sputtered at various discharge voltages (70–220 V) and the growth temperatures (130 °C and 380 °C). The microstructure was characterized by X-ray Diffractometry, Raman Spectroscopy, and Transmission Electron Microscopy. Meanwhile, the electrical and optical properties were measured by Hall-effect measurement and Spectroscopic Ellipsometry, respectively. We found that reducing the discharge voltage led to higher structural quality and better electrical properties, independent of the growth temperature. The benefit, from using a high temperature (i.e., 380 °C), of the structural improvement, can only be achieved when the discharge voltage has been decreased to ultralow (i.e., 70 V). Our results suggest that for high quality GZO films deposition, controlling the defect generation should be preferable to simply increasing the growth temperature. |
| Databáze: | OpenAIRE |
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