Domain-boundary structures in Ce-doped α-(Si-Al-O-N)
| Autor: | Y. Bando, C. M. Wang, Fangfang Xu, M. Mitomo |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Doping Metals and Alloys Mineralogy Crystal structure Nitride Condensed Matter Physics Electronic Optical and Magnetic Materials Ion Crystallography Transmission electron microscopy Covalent bond Interstitial defect Lattice (order) General Materials Science |
| Zdroj: | Philosophical Magazine A. 81:2271-2284 |
| ISSN: | 1460-6992 0141-8610 |
| DOI: | 10.1080/01418610010029025 |
| Popis: | The incorporation of large Ce ions into the interstitial sites in an α-(Si–Al–O–N) crystal structure is found to have produced a high density of structural defects. The defects are of planar nature and connect to form domain boundaries. Analysis via transmission electron microscopy has revealed that only a single lattice translation of ⅓(1010) type is involved in the formation of domains which are enveloped by some specific faces in this strongly bonded covalent compound, that is (0001), {1011} and the common surface with the matrix crystal on {1010}. Development of the domain-boundary structures is discussed via the application of image simulation based on different structural models of defects. |
| Databáze: | OpenAIRE |
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