Investigation of hybrid InSb and GaSb quantum nanostructures

Autor: Unchittha Prasatsap, Suwat Sopitpan, Chanchana Thanachayanont, Somchai Ratanathammaphan, Noppadon Nuntawong, Alangsan Sangpho, Suwit Kiravittaya, Thanadul Korkerdsantisuk, Visittapong Yordsri, Songphol Kanjanachuchai, Somsak Panyakeow, Supachok Thainoi, Aniwat Tandaechanurat, Nutthaphat Thornyanadacha, Zon
Rok vydání: 2021
Předmět:
Zdroj: Microelectronic Engineering. 237:111494
ISSN: 0167-9317
Popis: Hybrid InSb and GaSb nanostructures (NSs) with different repeated cycles; one, two and four, are inserted in double AlGaAs/GaAs heterostructures by molecular beam epitaxy in Stranski-Krastanov mode. Their morphologies and cross-sectional structure are inspected by atomic force microscopy and transmission electron microscopy. Raman spectroscopy reveals the effect of strains produced by the presence of InSb and GaSb NSs. Optical properties of hybrid InSb and GaSb NSs are investigated by power- and temperature-dependent photoluminescence (PL) spectroscopy. Broad and strong PL emission of hybrid NSs are observed from 20 K to room temperature. The Ohmic contacts are performed by gold alloys metallization and gold bonding on the p-n heterojunction devices for electrical current density-voltage characterization of the devices. Photovoltaic effect of hybrid quantum NS-devices with different NS-cycles are tested and recorded under various illumination intensities. Spectral response at long wavelength in infrared region beyond 1 μm originated from the presence of hybrid NSs is detected.
Databáze: OpenAIRE