Raman scattering study on vibrational modes in Ga1−xMnxN prepared by Mn-ion implantation
| Autor: | N.F. Chen, Md. Rafiqul Islam, Masayoshi Yamada |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Phonon Annealing (metallurgy) Mechanical Engineering Analytical chemistry Magnetic semiconductor Condensed Matter Physics Molecular physics Hot band Condensed Matter::Materials Science symbols.namesake Ion implantation Mechanics of Materials Molecular vibration symbols General Materials Science Raman spectroscopy Raman scattering |
| Zdroj: | Materials Science in Semiconductor Processing. 9:184-187 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2006.01.059 |
| Popis: | Raman scattering measurements have been carried out on ferromagnetic semiconductor Ga1-xMnxN prepared by Mn-ion implantation and post annealing. The Raman results obtained from the annealed and un-annealed Ga1-xMnxN demonstrate that crystalline quality has been improved in Ga1-xMnxN after annealing. Some new vibrational modes in addition to GaN-like modes are found in the Raman spectra measured from the Ga1-xMnxN where the GaN-like modes are found to be shifted in the higher frequency side than those measured from the bulk GaN. A new vibrational mode observed is assigned to MnN-like mode. Other new phonon modes observed are assigned to disorder-activated modes and Mn-related vibrational modes caused by Mn-ion implantation and post-annealing. (c) 2006 Elsevier Ltd. All rights reserved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect