Gate-Stress-Induced Threshold Voltage Instabilites, a Comparison of Ohmic and Schottky p-Gate GaN HEMTs
| Autor: | Thorsten Oeder, Martin Pfost |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Time constant Schottky diode Gallium nitride 02 engineering and technology 01 natural sciences Instability Threshold voltage chemistry.chemical_compound chemistry Logic gate 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Saturation (graph theory) Optoelectronics business Ohmic contact |
| Zdroj: | 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). |
| DOI: | 10.1109/wipdaasia49671.2020.9360288 |
| Popis: | In this study, we investigate the threshold voltage (V th ) instability of p-gate GaN HEMTs due to off-state gate stress by means of experimental results. For this purpose, two commercially available devices with an ohmic-gate and a Schottkygate are compared. The V th instability is shown to be a temporal phenomenon including short time constants, which is why a custom pulse setup is used here. With it, we observed a temporal deviation of the drain current in saturation, which is based on a temporal V th shift. The ohmic-gate device exhibits a negative V th instability, while the Schottky-gate device tends to a positive one. Both devices show a noticeable V th instability at their recommended on-state gate voltage $V_{GS,nom}$. The impact on the Schottky-gate device is up to 10 times higher, compared to the ohmic-gate device. |
| Databáze: | OpenAIRE |
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