A metal/polysilicon damascene gate technology for RF power LDMOSFETs
| Autor: | J.G. Fiorenza, Jorg Scholvin, J.A. del Alamo |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Polysilicon depletion effect RF power amplifier Copper interconnect Electrical engineering Silicon on insulator Polysilicon gate Electronic Optical and Magnetic Materials Optoelectronics Electrical and Electronic Engineering Power MOSFET Metal gate business Sheet resistance |
| Zdroj: | IEEE Electron Device Letters. 24:698-700 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | This letter describes a metal/polysilicon damascene gate technology for RF power LDMOSFETs. We compare the performance of SOI LDMOSFETs with metal/polysilicon damascene gates to that of identical devices with n/sup +/ polysilicon gates. The gate sheet resistance of the metal/polysilicon gate was 0.2 /spl Omega//sq. This very low sheet resistance greatly improved f/sub max/ and peak PAE, especially for the wide gate fingers that are critical in RF power applications. With a 140 /spl mu/m gate finger width, f/sub max/ was improved from 5 GHz to 25 GHz, and peak PAE at 1.9 GHz was improved from 12% to 52%. |
| Databáze: | OpenAIRE |
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