Advances in the Understanding of Oxide Precipitate Nucleation in Silicon

Autor:	Andreas Sattler, Gudrun Kissinger, V. Akhmetov, Timo Mueller, Dawid Kot, Wilfried Von Ammon
Rok vydání:	2009
Předmět:	Supersaturation Materials science Silicon Precipitation (chemistry) Metallurgy Oxide Analytical chemistry Nucleation chemistry.chemical_element Atmospheric temperature range chemistry.chemical_compound chemistry Getter Vacancy defect
Zdroj:	ECS Transactions. 18:995-1000
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3096563
Popis:	The influence of vacancy supersaturation installed by RTA pre-treatments in CZ silicon wafers on oxide precipitate nucleation was investigated in the temperature range 700-1000 {degree sign}C. Precipitation is enhanced at 800 {degree sign}C and increases with increasing vacancy concentration. Getter efficiency tests for Cu and Ni have shown that the threshold value of the normalized inner surface is shifting to higher values for increasing RTA temperature. This can be explained by a morphological change of the oxide precipitates with increasing vacancy concentration from plate-like to spherical shape.
Databáze:	OpenAIRE
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