AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)3)
| Autor: | T. Hirata, Y. Isogai, Arao Nakamura, S. Jinno, Yoshikazu Takeda, T. Kuno, Y. Yang, N. Watanabe, Yasufumi Fujiwara, T. Akane |
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| Rok vydání: | 2003 |
| Předmět: |
Tris
Materials science Atomic force microscopy business.industry Vapor phase General Physics and Astronomy chemistry.chemical_element Nanotechnology Surfaces and Interfaces General Chemistry Condensed Matter Physics Epitaxy Surfaces Coatings and Films Erbium chemistry.chemical_compound chemistry Optimum growth Optoelectronics business Layer (electronics) |
| Zdroj: | Applied Surface Science. 216:537-541 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(03)00495-1 |
| Popis: | ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp) 3 ). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP. |
| Databáze: | OpenAIRE |
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