Plasma immersion ion implantation for shallow junctions in silicon
| Autor: | Sivanarayanamoorthy Sivoththaman, G.J. Adriaenssens, M. Ádám, Nguyen Quoc Khánh, I Pintér, Jef Poortmans, István Bársony, A. H. Abdulhadi, Zs Makaró, Hai Zhi Song |
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| Rok vydání: | 1999 |
| Předmět: |
Deep-level transient spectroscopy
Silicon Chemistry Doping Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Rutherford backscattering spectrometry Plasma-immersion ion implantation Surfaces Coatings and Films Ion Ion implantation Rapid thermal processing |
| Zdroj: | Applied Surface Science. :224-227 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(98)00424-3 |
| Popis: | Low cost and low voltage (< 1 keV) Plasma Immersion Ion Implantation (PIII) for acceptor and donor doping was studied from RF plasmas of 1% PH 3 -H 2 and 1% B 2 H 6 -H 2 and gas mixtures, respectively. Conventional annealing and Rapid Thermal Processing (RTP) were applied for the activation of the dopants forming junction depths in 0.1-0.215 μm range. The level of the co-implanted metal concentration was determined by Rutherford Backscattering Spectrometry and Deep Level Transient Spectroscopy (DLTS) technique and found lower than 1 × 10 11 ion/cm 3 . The effects of PIII on the lifetime of carriers were followed by lifetime mapping. The lifetime degradation caused by PIII of medium duration was comparable with the effect of conventional doping processes. |
| Databáze: | OpenAIRE |
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