Electronic Properties Of Nanocrystalline Silicon Deposited With Different Crystallite Fractions And Growth Rates

Autor: Peter G. Hugger, Xixiang Xu, J. David Cohen, Guozhen Yue, Subhendu Guha, Baojie Yan, Jeffrey Yang
Rok vydání: 2008
Předmět:
Zdroj: MRS Proceedings. 1066
ISSN: 1946-4274
0272-9172
Popis: Junction capacitance measurements were used to characterize the properties of nanocrystalline silicon (nc-Si:H) solar cells. These methods included drive-level capacitance profiling (DLCP) to obtain spatially-resolved defect densities, as well as transient photocapacitance (TPC) and transient photocurrent (TPI) spectra to reveal optically responsive states in the band-gap, and to estimate minority carrier behavior before and after lightsoaking. Crystalline volume fractions were estimated using Raman spectroscopy. Previously we had identified at least two types of distinct behaviors in such nc-Si:H materials that depended on the crystalline volume fraction. Here, in one case, we report results indicating that both types of behavior can occur in a single sample, possibly indicating that the structural properties of that sample have evolved during growth.
Databáze: OpenAIRE
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