Temperature shift of intraband absorption peak in tunnel-coupled QW structure
| Autor: | C.A. Duque, V. Akimov, D. A. Firsov, M. Ya. Vinnichenko, Leonid E. Vorobjev, R M Balagula, V. Tulupenko |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Condensed matter physics Silicon Band gap Organic Chemistry Doping chemistry.chemical_element Heterojunction 02 engineering and technology Hartree Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Redshift Electronic Optical and Magnetic Materials Inorganic Chemistry chemistry Attenuation coefficient 0103 physical sciences Electrical and Electronic Engineering Physical and Theoretical Chemistry 0210 nano-technology Absorption (electromagnetic radiation) Spectroscopy |
| Zdroj: | Optical Materials. 66:160-165 |
| ISSN: | 0925-3467 |
| Popis: | An experimental study of the intersubband light absorption by the 100-period GaAs/Al 0.25 Ga 0.75 As double quantum well heterostructure doped with silicon is reported and interpreted. Small temperature redshift of the 1–3 intersubband absorption peak is detected. Numerical calculations of the absorption coefficient including self-consistent Hartree calculations of the bottom of the conduction band show good agreement with the observed phenomena. The temperature dependence of energy gap of the material and the depolarization shift should be accounted for to explain the shift. |
| Databáze: | OpenAIRE |
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