Effects of low-temperature Si buffer thickness and SiGe oxidation on sensitivity of Si1−xGex nanowire
| Autor: | Chiung Hui Lai, Kow-Ming Chang, Hui Lung Lai, Huai Yi Chen, Yi Lung Lai, Shiu Yu Wang, Chu Feng Chen, Yi Ming Chen, Allen Jong-Woei Whang, Tai Yuan Chang |
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| Rok vydání: | 2015 |
| Předmět: |
Electron mobility
Materials science Physics and Astronomy (miscellaneous) Silicon business.industry General Engineering Nanowire General Physics and Astronomy chemistry.chemical_element Insulator (electricity) Nanotechnology Buffer (optical fiber) chemistry Reagent Optoelectronics Nanometre business Biosensor |
| Zdroj: | Japanese Journal of Applied Physics. 54:06FG12 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | Si1−xGex nanowire biosensors are attractive for their high sensitivity due to the large surface-to-volume ratio, high carrier mobility, and silicon compatibility. In this work, we study the effect of the thickness of the low-temperature Si (LT-Si) buffer layer on an insulator on the sensitivity of oxidized Si1−xGex nanowire samples with different Ge contents by increasing the Si buffer thickness from 20 to 60 nm. 3-Aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent. It was demonstrated that, with the proper Ge content and LT-Si buffer thickness, the sensitivity of the Si1−xGex nanowire is high and it can be further improved by Si1−xGex oxidation. This can be attributed to the reduction of the diameter to the nanometer order, which gives rise to an increased surface-to-volume ratio and further enhances the sensitivity of the biosensor. |
| Databáze: | OpenAIRE |
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