Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliability
| Autor: | Yourun Zhang, Bo Zhang, Hang Chen, Hong Chen, Juntao Li, Wen Wang, Xiaochuan Deng, Yun Bai, Maojiu Luo |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Bipolar junction transistor 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound Reliability (semiconductor) chemistry 0103 physical sciences Electrode Materials Chemistry Silicon carbide Optoelectronics Breakdown voltage Electrical and Electronic Engineering Current (fluid) 0210 nano-technology business Current density Common emitter |
| Zdroj: | Semiconductor Science and Technology. 34:045001 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/1361-6641/ab032c |
| Popis: | A silicon carbide bipolar junction transistor with novel emitter field plate (EFP-BJT) design is proposed in this paper. The fabricated EFP-BJT features a metal plate of the extending emitter electrode with a 50-nanometer-thick oxide layer overlapped on the extrinsic base surface. The contrast of experimental results show that a 56% increase of maximum current gain is obtained by the EFP-BJT compared with a conventional SiC BJT (C-BJT), with the EFP-BJT's current gain of 43 measured at the collector current density (J C ) of 716 A cm−2 corresponding to a specific on-state resistance (R SP_ON) of 5.4 mΩ cm2 and open-base breakdown voltage (BV CEO) of 1.5 kV. The novel EFP-BJTs are entirely compatible with the process and design considerations of the conventional ones. The in-depth mechanism comparisons between the proposed EFP-BJT and C-BJT are studied by the simulation tool TCAD Silvaco. The surface recombination effect of EFP-BJT is greatly reduced by the modulation of the emitter field plate. Additionally, due to the surface recombination suppression of the novel structure, EFP-BJTs have effectively enhanced reliability. Compared with C-BJTs, there is no significant degradation of the collector current for the fabricated EFP-BJTs under the forward current stress test. |
| Databáze: | OpenAIRE |
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