EPR and Raman study of silicon layers obtained by gas detonation spraying

Autor: Bingbing Liu, Volodymyr P. Temchenko, V.B. Lozinskii, V.Ya. Bratus, V.O. Yukhymchuk, Nickolai I. Klyui, Wei Han
Rok vydání: 2017
Předmět:
Zdroj: Materials Science in Semiconductor Processing. 71:232-239
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2017.08.006
Popis: We demonstrate availability of gas detonation deposition spraying (GDS) to obtain silicon layers that can be used for production of solar cells. Silicon powder remaining as secondary raw material of silicon and/or silicon production is used during GDS. To study defects and structural perfection of initial powders and obtained layers, electron paramagnetic resonance (EPR) and Raman spectroscopy are used. It is shown that one part of EPR spectra displays resonances originating from different nearest-neighbor configurations of silicon dangling bonds, whereas an increase of the total number of paramagnetic defects in GDS silicon layer is related to the rise of conduction electrons or electrons filled band tail states. Thermal annealing of layers in hydrogen ambience further reduces the number of silicon dangling bonds owing to their passivation. Based on the results of X-ray diffraction, EPR and Raman spectroscopy it is assumed that the GDS Si layers are composed of randomly oriented and partially oxidized monocrystalline silicon grains. It is found that optical and photoelectric properties of the layers obtained indicate a possibility to apply them for solar cells production.
Databáze: OpenAIRE