Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure
| Autor: | Baoying Fang, Yi Li, Hao Rulong, Tingting Xu, Peizu Chen, Liu Fei, Sun Yao, Zhengyi Wu, Tang Jiayin, Wei Jiang |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Annealing (metallurgy) 02 engineering and technology Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Isotropic etching Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Threshold voltage law.invention law Electric field 0103 physical sciences Optoelectronics Metal–insulator transition Thin film Photolithography 0210 nano-technology business |
| Zdroj: | Infrared Physics & Technology. 75:82-86 |
| ISSN: | 1350-4495 |
| DOI: | 10.1016/j.infrared.2015.12.012 |
| Popis: | A VO 2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO 2 (FTO) conductive glass substrate. The FTO/VO 2 /FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I – V hysteresis loop for the FTO/VO 2 /FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO 2 /FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field. |
| Databáze: | OpenAIRE |
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