The Effect of Self-Heating in LDMOSFET Expansion Regime
| Autor: | Ruey-Hsin Liou, Hsueh-Liang Chou, Jeng Gong, Yu-Chang Jong, J. C. W. Ng, Chih-Fang Huang, Hsiao-Chin Tuan |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
LDMOS
Materials science business.industry Transistor Electrical engineering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Temperature measurement Electronic Optical and Magnetic Materials law.invention Computer Science::Hardware Architecture Impact ionization law Electric field Logic gate MOSFET Optoelectronics Electrical and Electronic Engineering business Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 59:3042-3047 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2012.2214036 |
| Popis: | In this paper, it is the first time that the effect of self-heating of LDMOS transistors operating in the so-called expansion regime of the output characteristics is studied. Experimental characterization and numerical simulations are used to demonstrate that, in order to explain the origin of the current enhancement phenomenon observed in the output characteristics of LDMOS transistors biased at high gate and drain voltages (which is named as the expansion regime), the thermal effect of the device self-heating, in addition to the proposed intrinsic MOSFET saturation, has to be considered. This is supported by analyzing the temperature, charged carrier velocity, impact ionization rate, and electric field at different positions in the LDMOS transistors biased at different gate and drain voltages. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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