Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition

Autor: Yiping Zeng, Wanshun Zhao, Junxiu Chen, Guo Sheng Sun, Fangfang Zhang, Min-Xin Guan, Yan Guoguo, Shen Zhanwei, Youping He, Xingfang Liu, Lishuang Wang, Wen Zhengxin
Rok vydání: 2019
Předmět:
Zdroj: Journal of Crystal Growth. 507:283-287
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2018.10.055
Popis: Although homoepitaxial growth of multiple 4H-SiC wafers in one run can be realized in commercial specialized chemical vapor deposition equipment, wafers must be loaded onto a rotatable large susceptor and overspread on it, which leads to the diameter of the susceptor increases as the number or the total area of the epitaxial wafer increases. in this work, we demonstrated a facile method for growth of multiple 4H-SiC wafers assembled in a simple holder via a home-made single-wafer conventional chemical vapor deposition equipment without a large susceptor. The structural properties of the obtained 4H-SiC films on each wafer were investigated by means of optical microscope, AFM, SEM and Raman. Results showed that high quality of homogeneous 4H-SiC film was epitaxially grown on the inner region of each wafer, while on the outer region, influenced by the mechanical parts of the simple holder, the quality was degraded. At last we draw a prospective on homoepitaxial growth of whole wafer through further reducing the adverse outer region via advanced holder and wafer assembly, which could greatly improve production efficiency and reduce energy consumption.
Databáze: OpenAIRE
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