Electronic band structures of Te-doped GaN nanowires
| Autor: | Harun Ozkisi, Sena Güler Özkapı, Barış Özkapı, Seyfettin Dalgiç |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Physics::Computational Physics
Materials science Band gap business.industry Doping Nanowire Electronic band Physics::Optics Nanotechnology 02 engineering and technology Radius Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Condensed Matter::Materials Science Atom Optoelectronics Density functional theory Physics::Chemical Physics 0210 nano-technology business Electronic properties |
| Zdroj: | Materials Today: Proceedings. 4:11640-11643 |
| ISSN: | 2214-7853 |
| DOI: | 10.1016/j.matpr.2017.09.076 |
| Popis: | In this study, we investigate electronic band structures of Te-doped GaN nanowires with three different radii using the first principles methods, which is based on the density functional theory. The relaxed structures, total energies and electronic band structures of pure and Te-doped GaN nanowires are calculated. The results show that the energy band gap values reduce when GaN nanowires are doped with a Te atom. While the band gap values of pure GaN nanowires increase with increasing nanowire radius, they present a decrease for Te-doped GaN nanowires. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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