Floating-zone growth and characterization of Fe2SiO4 single crystals

Autor:	R. Dieckmann, Tse-Lun Tsai, Steven A. Markgraf
Rok vydání:	1996
Předmět:	Controlled atmosphere Chemistry Resolution (electron density) Condensed Matter Physics Crystallographic defect law.invention Inorganic Chemistry Crystallography law Etching (microfabrication) Materials Chemistry Fayalite Atomic ratio Electron microscope Dislocation
Zdroj:	Journal of Crystal Growth. 169:759-763
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(96)00459-9
Popis:	High quality single crystals of fayalite, Fe 2 SiO 4 , with well-developed morphology were successfully grown by the floating-zone method under a controlled atmosphere. Crystals,∼ 7–10mm in diameter and∼ 40–60mm in length, were grown along the three major crystallographic axes. All crystals had well-developed facets or flat surfaces and were free of inclusions at the resolution of routine electron microscopy. TheFeSi atomic ratio determined by the ICP-AES technique was 1.992. The most numerous crystal defects observed were bubbles; the dislocation densities as revealed by etching were approximately5 × 10 4 /cm 2 .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a95582ec0cec0c807a1d8dad56c0abd8 https://doi.org/10.1016/s0022-0248(96)00459-9 Zobrazit plný text záznamu Full Text from ScienceDirect