High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures
| Autor: | M. Yu. Presniakov, I. N. Trunkin, P. P. Maltsev, S. S. Pushkarev, E. A. Klimov, G. V. Ganin, G. B. Galiev, Imamov Rafik M, Andrey S. Orekhov, A. L. Vasil’ev, O. M. Zhigalina |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Scanning electron microscope Superlattice Analytical chemistry 010403 inorganic & nuclear chemistry Epitaxy 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electron diffraction Transmission electron microscopy 0103 physical sciences Microscopy Thin film Quantum well |
| Zdroj: | Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 10:495-509 |
| ISSN: | 1819-7094 1027-4510 |
| Popis: | InAlAs/InGaAs/InAlAs nanoheterostructures with different structures of metamorphic buffer layer and quantum well, which were grown by means of molecular-beam epitaxy on GaAs and InP substrates, are investigated. The laboratory technology of the growth of the given nanoheterostructures with predicted properties is perfected. The potential of an approach based on the comprehensive analysis of experimental data obtained via different techniques, namely, X-ray diffractometry, electron diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and atomic-force microscopy is studied. The metamorphic buffer layer design is improved on the basis of the results of the performed investigations. A method whereby balanced-mismatched superlattices are introduced directly inside the metamorphic buffer layer is proposed. It is established that the technological parameters of the growth of nanoheterostructures affect their structural perfection and electrophysical properties. |
| Databáze: | OpenAIRE |
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