Lateral n–i–p junctions formed in an InSb quantum well by bevel etching
| Autor: | Keith James Nash, M. T. Emeny, Geoffrey R. Nash, John H. Jefferson, Philip Derek Buckle, C. J. Bartlett, S. J. Smith, Louise Buckle, Timothy Ashley |
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| Rok vydání: | 2004 |
| Předmět: |
Condensed matter physics
Silicon Chemistry chemistry.chemical_element Substrate (electronics) Atmospheric temperature range Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Bevel Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Etching (microfabrication) Materials Chemistry Electrical and Electronic Engineering Poisson's equation Quantum well Molecular beam epitaxy |
| Zdroj: | Semiconductor Science and Technology. 20:144-148 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/20/2/007 |
| Popis: | We have used a novel, simple technique based on bevel etching, to fabricate samples containing lateral n–i–p junctions in an InSb/InAlSb quantum well. The structure was designed by self-consistent solution of Schrodinger's and Poisson's equations, and grown by molecular beam epitaxy on a SI GaAs substrate. Current/voltage characteristics were measured as a function of temperature between 10 and 80 K, and rectifying characteristics were obtained over the whole temperature range. |
| Databáze: | OpenAIRE |
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