| Popis: |
To verify the Si emission phenomenon during oxidation of SiC, the behavior of Si atoms was investigated using HfO2/SiC structures. At low oxygen pressure, i.e. the oxidation condition predominant to active oxidation, Si emission into oxide layer and the growth of SiO2 on the oxide surface were clearly observed by TOF-SIMS. On the other hand, the growth of SiO2 on the surface was suppressed under an ordinary pressure. These results evidence the Si emission during oxidation that is proposed in the Si and C emission model. |
