| Popis: |
A self‐aligned fabrication process is presented for making surface‐emitting high‐power AlGaAs/GaAs GRIN‐SCH‐SQW semiconductor laser sources designed to produce ≳1 W optical output at the nominal GaAs wavelength of 830 nm. The process uses double‐layer masking with photoresist masks used as repeatedly changed selector masks on top of a semimetallic amorphous carbon (SMAC) mask which is an unchanging master mask on top of the AlGaAs/GaAs. The SMAC master mask, defined in one photolithography step, thus assuring the self‐alignment, contains all the edges to be etched at all the different angle/depth specifications. Four separate Cl+2/Cl2 chemically assisted ion beam etches of AlGaAs/GaAs at three different angle/depth specifications create the three‐dimensional microstructures of vertical ridges, back‐to‐back external 45° reflectors, and vertical laser facets with current deflection trenches, in large arrays. Final encapsulation is by plasma‐enhanced chemical‐vapor‐deposited (PECVD) amorphous silicon‐rich ni... |
