Electroluminescence Mechanism in Light Emitting Field Effect Transistors Based on Perovskite Nanocrystal Films in a Semiconductor Polymer Matrix

Autor:	Igor Shcherbakov, V. M. Vyatkin, Olga P. Chikalova-Luzina, Andrey N. Aleshin
Rok vydání:	2020
Předmět:	Materials science Solid-state physics business.industry Electroluminescence Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor Nanocrystal Optoelectronics Rectangular potential barrier Spontaneous emission Field-effect transistor business Perovskite (structure)
Zdroj:	Physics of the Solid State. 62:1500-1505
ISSN:	1090-6460 1063-7834
DOI:	10.1134/s1063783420080089
Popis:	The mechanisms of radiative recombination and electroluminescence in the structures based on the films of perovskite nanocrystals CsPbBr3 in the matrix of a semiconductor polymer MEH-PPV have been considered. It has been shown that two mechanisms determine the electroluminescence intensity in light-emitting field-effect transistors with active layers based on the MEH-PPV films:CsPbBr3 (nanocrystals): recombination of the charged carriers injected into the polymer matrix and recombination at the interface polymer/perovskite nanocrystals. The results of theoretical and experimental studies have shown that the superlinear dependence of the electroluminescence intensity on the level of electrical excitation in the light-emitting field-effect transistors based on MEH-PPV:CsPbBr3(nanocrystals) is due to the mechanism of electron tunneling through a potential barrier at the electrode.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a939b51bf544edb8234c059b7bee38c3 https://doi.org/10.1134/s1063783420080089 Zobrazit plný text záznamu Full text from SpringerLink