36 GHz Static Digital Frequency Dividers in AlInAs-Gainas Hbt Technology
| Autor: | Joseph F. Jensen, William E. Stanchina, M.W. Pierce, R.A. Metzger, T.V. Kargodorian, Takyiu Liu, L.G. McCray |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Transistor chemistry.chemical_element law.invention Gallium arsenide chemistry.chemical_compound chemistry law Optoelectronics Beryllium business Monolithic microwave integrated circuit Molecular beam epitaxy Electronic circuit Voltage |
| Zdroj: | [1991] 49th Annual Device Research Conference Digest. |
| DOI: | 10.1109/drc.1991.664725 |
| Popis: | Summary form only given. Static divide-by-four circuits have been fabricated that operate up to 36 GHz using AlInAs-GaInAs heterojunction bipolar transistor (HBT) IC technology processing an f/sub t/ and f/sub max/ of 110 and 73 GHz, respectively. The transistors used consisted of an abrupt emitter-base junction design which incorporated a low-temperature p-GaInAs spacer as part of the base to inhibit beryllium diffusion. The AlInAs-GaInAs HBT device layers were grown lattice-matched to semi-insulating InP substrates by solid-source molecular beam epitaxy (MBE). > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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