Single shot spin readout using a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures
| Autor: | Dwight Luhman, Nathaniel Bishop, Lisa A Tracy, G. A. Ten Eyck, Tammy Pluym, Joel R. Wendt, Malcolm S. Carroll, Michael Lilly, S. M. Carr |
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| Rok vydání: | 2016 |
| Předmět: |
Physics
Physics and Astronomy (miscellaneous) business.industry Amplifier Bandwidth (signal processing) Transistor Analytical chemistry Coulomb blockade 02 engineering and technology High-electron-mobility transistor Dissipation 021001 nanoscience & nanotechnology 01 natural sciences Capacitance law.invention law 0103 physical sciences Optoelectronics Dilution refrigerator 010306 general physics 0210 nano-technology business |
| Zdroj: | Applied Physics Letters. 108:063101 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.4941421 |
| Popis: | We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ∼9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ∼2.7×103, the power dissipation of the amplifier is 13 μW, the bandwidth is ∼1.3 MHz, and for frequencies above 300 kHz the current noise referred to input is ≤70 fA/ Hz. With this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched 28Si with 96% visibility. |
| Databáze: | OpenAIRE |
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