Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy

Autor:	Shuji Namakura, S. Newman, Zhen Chen, James S. Speck, Steven P. DenBaars, Derrick S. Kamber, Troy J. Baker, Yuan Wu, Feng Wu
Rok vydání:	2009
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Cathodoluminescence Chemical vapor deposition Epitaxy Crystallography Transmission electron microscopy Trench Sapphire Optoelectronics Metalorganic vapour phase epitaxy Dislocation business
Zdroj:	Applied Physics Letters. 94:121906
ISSN:	1077-3118 0003-6951
Popis:	Coalesced, crack-free (0001) AlN films were grown on stripe patterned sapphire substrates without AlN seed layers using hydride vapor phase epitaxy. Using templates with stripes oriented in the ⟨112¯0⟩sapphire direction, lateral epitaxial overgrowth AlN films were coalesced over trench regions as wide as 10 μm despite parasitic sidewall and trench growth. Using transmission electron microscopy, a reduction in the dislocation density from 1.6×109 cm−2 in the seed region to less than 1.0×108 cm−2 in the wing region was demonstrated. Atomic force microscopy and cathodoluminescence measurements were also performed to assess the material quality.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a932baa12e3b41da05dfb82a507a7331 https://doi.org/10.1063/1.3089253 Zobrazit plný text záznamu