Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy
Autor: | Shuji Namakura, S. Newman, Zhen Chen, James S. Speck, Steven P. DenBaars, Derrick S. Kamber, Troy J. Baker, Yuan Wu, Feng Wu |
---|---|
Rok vydání: | 2009 |
Předmět: | |
Zdroj: | Applied Physics Letters. 94:121906 |
ISSN: | 1077-3118 0003-6951 |
Popis: | Coalesced, crack-free (0001) AlN films were grown on stripe patterned sapphire substrates without AlN seed layers using hydride vapor phase epitaxy. Using templates with stripes oriented in the ⟨112¯0⟩sapphire direction, lateral epitaxial overgrowth AlN films were coalesced over trench regions as wide as 10 μm despite parasitic sidewall and trench growth. Using transmission electron microscopy, a reduction in the dislocation density from 1.6×109 cm−2 in the seed region to less than 1.0×108 cm−2 in the wing region was demonstrated. Atomic force microscopy and cathodoluminescence measurements were also performed to assess the material quality. |
Databáze: | OpenAIRE |
Externí odkaz: |