Ellipsometric assessment of (Ga, Al) As/GaAs epitaxial layers during their growth in an organometallic VPE system

Autor:	J. Hallais, J. B. Theeten, F. Hottier
Rok vydání:	1979
Předmět:	Inorganic Chemistry Optics Materials science business.industry Ellipsometry Superlattice Materials Chemistry Optoelectronics Heterojunction Condensed Matter Physics business Epitaxy Chemical composition
Zdroj:	Journal of Crystal Growth. 46:245-252
ISSN:	0022-0248
DOI:	10.1016/0022-0248(79)90064-2
Popis:	A fast automatic ellipsometer is associated with an organometallic CVD system for a surface analysis of GaAlAs/GaAs heterostructures during their growth. The capabilities of the ellipsometer are first illustrated: a real time determination of the rate growth and the chemical composition of the layers is obtained. Alternate grwoth of Ga0.64Al0.36As and GaAs layers is examined under various conditions. Interface anomalies are observed when GaAlAs is grown on GaAs while GaAs growth on (Ga,Al)As yields very sharp junctions. These results are compared with recent TEM observations on MBE (GaAs)n-(AlAs)m superlattices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a9124266151ad6f68107a3e1deb8cec2 https://doi.org/10.1016/0022-0248(79)90064-2 Zobrazit plný text záznamu