| Autor: |
H. Thim, G. Rieder, K. Lübke |
| Rok vydání: |
1983 |
| Předmět: |
|
| Zdroj: |
Sensors and Actuators. 4:317-322 |
| ISSN: |
0250-6874 |
| Popis: |
Dual-axis light spot position-sensitive GaAs Schottky barrier diodes with active areas of 4 x 4 mm2 have been fabricated. Scanning the spot of a HeNe laser across the surface of the device, position linearity of the output signal was found to be better than 1% full scale within 80% of the light sensitive area of the detector. Load-dependent deviations from linearity near the contact boundaries have been attributed to finite contact resistance. Position differentials of less than 4 μm could be resolved in the centre of the sensor. Dynamic investigations under reverse bias conditions (10 V) showed that the response time to light pulses was of the order of 10 ns. However, this speed is limited by the configuration of the sensor presented (junction capacitance, sheet resistance) rather than by the collection mechanism of the photogenerated carriers. It is shown theoretically that the collection mechanism in a GaAs sensor is inherently faster than in a Si sensor at a wavelength in the near-infrared region where photons penetrate deeply into the undepleted bulk. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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