Structural and electrical properties of thin microcrystalline silicon films deposited by an electron cyclotron resonance plasma discharge of 2% SiH4/Ar further diluted in H2
| Autor: | R. L. Wallace, Wayne A. Anderson, B. Jagannathan |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
Silicon Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics Electron cyclotron resonance Grain size Surfaces Coatings and Films law.invention Dilution symbols.namesake Vacuum deposition chemistry law symbols Crystallization Raman spectroscopy |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:2751-2756 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.581481 |
| Popis: | Microcrystalline silicon (μc-Si) was deposited in a simple, low cost microwave electron cyclotron resonance plasma system by H2 dilution of 2% SiH4/Ar. The film growth and properties have been examined with substrate temperatures between 300 and 450 °C for pressures of 1–40 mTorr. Raman spectroscopy has been used extensively to study the microstructure of the film, and to determine the crystallized fraction and grain sizes in the film, for growth variations caused by H2 dilution, growth pressure, and temperature. H2 dilution of the plasma is found to increase the grain size and the crystallized fraction of the deposited films. Crystallization could also be initiated in the films deposited using only the Ar diluted SiH4 by increasing the power coupled to the discharge. Increasing the H2 dilution results in compact films with a low hydrogen content, while a decrease is seen to create more voids in the film. The μc-Si films (∼70% crystallized fraction), prepared at 400 °C, with grain sizes between 200 and 30... |
| Databáze: | OpenAIRE |
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