A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on GaN grown on silicon
| Autor: | Zainuriah Hassan, Fong Kwong Yam, M. Barmawi, Sugianto, Mat Johar Abdullah, Pepen Arifin, K. Ibrahim, Y. C. Lee, Maman Budiman |
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| Rok vydání: | 2005 |
| Předmět: |
Silicon
Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Chemical vapor deposition Condensed Matter Physics Electron cyclotron resonance Surfaces Coatings and Films Photodiode law.invention Amorphous solid Microcrystalline chemistry law Metalorganic vapour phase epitaxy Dark current |
| Zdroj: | Applied Surface Science. 249:91-96 |
| ISSN: | 0169-4332 |
| Popis: | We report on the characteristics of metal-semiconductor-metal (MSM) photodiodes based on GaN films grown on silicon substrates by electron cyclotron resonance (ECR) plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD) at growth temperature of 200 and 600 °C. Structural analysis of the GaN samples used for the photodiodes fabrication were performed by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), and energy dispersive X-ray analysis (EDX) to analyze the crystalline quality of the samples. The analysis has revealed that the GaN samples grown at 200 and 600 °C were in amorphous and microcrystalline phase, respectively. Electrical characterization of the MSM photodiodes were carried out by using current–voltage ( I – V ) measurements. At 10 V, the photodiodes based on amorphous GaN has a dark current of 0.18 μA while the microcrystalline GaN based photodiode has a dark current of 18 μA. |
| Databáze: | OpenAIRE |
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