Field inversion generated in the CMOS double-metal process due to PETEOS and SOG interactions
| Autor: | Lu-Min Liu, Shu-Lan Ying, Chung-Hsin Fang, Tien-Li Chen, Mou-Shiung Lin, Shun-Liang Hsu, Chun-Yen Chang |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
Passivation business.industry Sintering Dielectric Chemical vapor deposition Nitride Electronic Optical and Magnetic Materials CMOS Plasma-enhanced chemical vapor deposition Chemical-mechanical planarization Electronic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 40:49-53 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.249423 |
| Popis: | Severe field inversion was observed in circuits fabricated by the CMOS double metal process using PETEOS/inorganic SOG/PEOX as the intermetal dielectrics and PEOX/PECVD nitride as the passivation layer. The authors performed detailed studies and concluded that the field inversion is caused by the interaction between PETEOS and non-carbon-based SOG, triggered by the H/sup +/ released from PECVD nitride during the sintering. No field inversion was observed when PEOX/inorganic SOG/PEOX was used as the intermetal dielectrics. The effect of field inversion on the circuit yield is also discussed. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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