A Critical View of IGBT Buffer Designs for 200 °C Operation
| Autor: | Jan Vobecky, Charalampos Papadopoulos, Chiara Corvasce, A. Mesemanolis, Maxi Andenna, Elizabeth Buitrago, Munaf Rahimo |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics 020208 electrical & electronic engineering 02 engineering and technology Insulated-gate bipolar transistor 01 natural sciences Planar Soft switching 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Wafer Short circuit Leakage (electronics) |
| Zdroj: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd.2019.8757638 |
| Popis: | Different state-of-the-art buffer concepts compatible with ≥ 200 mm diameter, thin wafer technology ( $ ) have been optimized in enhanced planar insulated gate bipolar transistor (IGBT) technology for 1200 V and 1700 V, 150 A rated, 13.6 x 13.6 mm2 devices and evaluated with the goal of reducing leakage currents to enable a stable operation up to $\mathbf{T}_{\mathbf{j}}=200\ {{}^{\circ}\mathbf{C}}$ . With the maximum punch through (MPT) ultra-thin field stop design in particular, we can produce devices with the lowest leakage currents up to $\mathbf{T}_{\mathbf{j}}=200\ {{}^{\circ}\mathbf{C}}$ . These devices were found to provide rugged RBSOA and soft switching, can withstand short circuit pulses as long as $10 \ \boldsymbol{\mu}\mathbf{s}$ and be thermally stable at $\mathbf{T}_{\mathbf{j}}=200\ {{}^{\circ}\mathbf{C}}$ . |
| Databáze: | OpenAIRE |
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