Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability
| Autor: | Manuel Belanche, G. Romano, Andrei Mihaila, Enea Bianda, Lars Knoll, Marco Bellini, Elena Mengotti, Yulieth Arango, Giovanni Alfieri, Stephan Wirths |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Wide-bandgap semiconductor Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Dielectric 01 natural sciences Stability (probability) Power (physics) Threshold voltage 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Optoelectronics Power MOSFET business Low voltage High-κ dielectric |
| Zdroj: | 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| Popis: | Despite the recent progress in SiC power MOSFET technology and its commercialization, the defective MOS interface still hampers the exploitation of the full potential of these devices. We present results using our high-k gate stack technology that shows significantly reduced density of interface states (D it ) along with superior threshold voltage (V TH ) stability for low voltage SiC power MOSFETs. The findings indicate virtually no V TH -shift during static characterization as function of the starting gate voltage and its ramp. Furthermore, dynamic switching results show virtually no threshold voltage shift for $V_{GS,start} \gt -12$V. |
| Databáze: | OpenAIRE |
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