A 6 GHz 0.92 dB NF Cascode LNA in 180 nm SOI CMOS Technology
| Autor: | Nagasatish Godavarthi, Balaji Swaminathan, Subramanian Narasimhamoorthy, Kaushik Ghosal, Anupam Dutta, Randy Wolf, Venkata Narayana Rao Vanukuru |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Amplifier Transistor Linearity Silicon on insulator 020206 networking & telecommunications 02 engineering and technology Inductor 01 natural sciences law.invention CMOS law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Cascode business Common gate |
| Zdroj: | 2019 IEEE MTT-S International Microwave and RF Conference (IMARC). |
| DOI: | 10.1109/imarc45935.2019.9118673 |
| Popis: | A 6 GHz CMOS low-noise amplifier (LNA) with very low noise-figure (NF) of 0.92 dB is reported in this paper. An inductively degenerated cascode topology is used for the LNA. The common source device is a floating body transistor for higher unity gain cut-off frequency and lower NFmin while the common gate device is a body contacted device with higher self gain. High resistivity (HR) silicon-on-insulator (SOI) technology renders higher quality factor (Q) values for inductors which results in reduced NF. The prototype LNA is fabricated (Fig. 1) and characterized using a 180 nm RF-SOI CMOS technology. Measurements show 15.9 dB of gain, 0.92 dB of NF, -1.1 dBm of input third-order intercept point (IIP3) for the LNA, with 12 mW dc power consumption. |
| Databáze: | OpenAIRE |
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