Low temperature crystallized Ta2O5/Nb2O5 bi-layers integrated into RIR capacitor for 60 nm generation and beyond
| Autor: | Jae-soon Lim, Jin-Il Lee, U-In Chung, Sung-Tae Kim, Cha-young Yoo, Kyu-Ho Cho, Sungho Park, Joo-Tae Moon, Han-jin Lim, Jung-hyun Lee |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Analytical chemistry Mineralogy Equivalent oxide thickness Dielectric Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Atomic layer deposition Capacitor law Transmittance Electrical and Electronic Engineering Crystallization Electron microscope Leakage (electronics) |
| Zdroj: | Microelectronic Engineering. 80:317-320 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2005.04.032 |
| Popis: | Ta"2O"5/Nb"2O"5 bi-layers were prepared on Ru/SiO"2/Si substrate by Atomic Layer Deposition, and post annealed up to 575^oC. The crystallization temperature of the bi-layers was 550^oC, which was 100^oC lower than that of Ta"2O"5 single layer. The thickness of the dielectric layers was also important parameter for the crystallization temperature. Transmittance Electron Microscopy image and depth profile analysis showed that Ta"2O"5 and Nb"2O"5 mixed each other during the crystallization. It was suggested that inter diffusion of two layers decreased the crystallization temperature of the bi-layers. Equivalent oxide thickness of crystalline Ru/Ta"2O"5/Nb"2O"5/Ru capacitor was 7.6A with less than 100nA/cm^2 leakage currents, which satisfied the requirements for 60nm generation DRAM capacitor and beyond. |
| Databáze: | OpenAIRE |
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