'SensArray' voltage sensor analysis in an inductively coupled plasma

Autor:	C. C. Hsu, David B. Graves, M. J. Titus
Rok vydání:	2010
Předmět:	Chemistry business.industry Capacitive sensing Analytical chemistry Biasing Surfaces and Interfaces Plasma Condensed Matter Physics Surfaces Coatings and Films Optoelectronics Electron temperature Wafer Inductively coupled plasma business Electrical impedance Voltage
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 28:139-146
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.3268615
Popis:	A commercially manufactured PlasmaVolt™ sensor wafer was studied in an inductively coupled plasma reactor in an effort to validate sensor measurements. A pure Ar plasma at various powers (25–420W), for a range of pressures (10–80mT), and bias voltages (0–250V) was utilized. A numerical sheath simulation was simultaneously developed in order to interpret experimental results. It was found that PlasmaVolt™ sensor measurements are proportional to the rf-current through the sheath. Under conditions such that the sheath impedance is dominantly capacitive, sensor measurements follow a scaling law derived from the inhomogeneous sheath model of Lieberman and Lichtenberg, [Principles of Plasma Discharges and Materials Processing (Wiley, New York, 2005)]. Under these conditions, sensor measurements are proportional to the square root of the plasma density at the plasma-sheath interface, the one-fourth root of the electron temperature, and the one-fourth root of the rf bias voltage. When the sheath impedance becomes...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a8c621cf4b94a533133dec6a10d33635 https://doi.org/10.1116/1.3268615 Zobrazit plný text záznamu