Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation
| Autor: | Qinzhu Zhang, L. H. Zhao, Huilong Zhu, Tianchun Ye, Jianghao Han, Jinjuan Xiang, Junshuai Li, Xuezheng Ai, Qingzhu Zhang, Hui Yang, Lin-Pu Li, Tengzhi Yang, Anyan Du, Na Zhou, Yongkui Zhang, Jingyan Li, G. B. Bai, Xiaobin He, Xiaolong Ma, Chenglin Zhao, Weixing Huang, Yankui Li, Henry H. Radamson, Kunpeng Jia, Z. H. Xuan, Xiaogen Yin, Jun Luo, R. L. Chen, Yao Lu, Weiying Wang, Yadong Zhang, Guilei Wang, Y. Qu, Shujuan Mao, Yaohui Zhang, Zhenhua Wu, Chunlong Li, Shishuai Ma, Lu Xie, Zhenzhen Kong, Haizhou Yin, Jianfeng Gao, J. Zhao |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor Nanowire 01 natural sciences Electronic Optical and Magnetic Materials law.invention Silicon-germanium Gallium arsenide chemistry.chemical_compound chemistry law Etching (microfabrication) Logic gate 0103 physical sciences Optoelectronics Field-effect transistor Electrical and Electronic Engineering business High-κ dielectric |
| Zdroj: | IEEE Electron Device Letters. 41:8-11 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2019.2954537 |
| Popis: | A new type of vertical nanowire (NW)/ nanosheet (NS) field-effect transistors (FETs), termed vertical sandwich gate-all-around (GAA) FETs (VSAFETs), is presented in this work. Moreover, an integration flow that is compatible with processes used in the mainstream industry is proposed for the VSAFETs. Si/SiGe epitaxy, isotropic quasi-atomic-layer etching (qALE), and gate replacement were used to fabricate pVSAFETs for the first time. Vertical GAA FETs with self-aligned high-k metal gates and a small effective-gate-length variation were obtained. Isotropic qALE, including Si-selective etching of SiGe, was developed to control the diameter/thickness of the NW/NS channels. NWs with a diameter of 10 nm and NSs with a thickness of 20 nm were successfully fabricated, and good device characteristics were obtained. Finally, the device performance was investigated and is discussed in this work. |
| Databáze: | OpenAIRE |
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