Investigation of Thermoelectric Power of CuInGaTe2 Single Crystals
| Autor: | S. A. Hussein, J. A. M. Abdulwahed, A. Salem, A. S. Salwa |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Solid-state physics Condensed matter physics Crystal growth Electron Atmospheric temperature range Conductivity Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Electrical resistivity and conductivity Seebeck coefficient 0103 physical sciences Diffusion (business) 010306 general physics |
| Zdroj: | Physics of the Solid State. 62:116-119 |
| ISSN: | 1090-6460 1063-7834 |
| DOI: | 10.1134/s106378342001028x |
| Popis: | Thermoelectric power values of CuInGaTe2 (CIGT) single crystals were estimated without precedent for a wide temperature range. An authorial unique design dependent on Bridgman procedure for crystal growth from the melt has been utilized to prepare our sample. The single crystals show a p-type conductivity within the full range of temperature. Experimental examination has been made of the variety of electrical conductivity and thermoelectric power with CIGT single crystals. The holes and electrons effective masses, the mobilities of the electrons and holes, and the diffusion length of the majority and minority carriers were determined at room temperature. The electron and hole diffusion coefficients in CIGT single crystals are Dn = 7.938 m2/s and Dp = 7.365 m2/s, respectively. Additionally, the holes and electrons relaxation times were derived from the mobilities. These outcomes give us a complete and clear picture for the main physical parameters essential for the industrial applications. |
| Databáze: | OpenAIRE |
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