| Autor: |
A. V. Borisov, L. N. Korolevych, N. V. Maksimchuk |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
2014 IEEE 34th International Scientific Conference on Electronics and Nanotechnology (ELNANO). |
| DOI: |
10.1109/elnano.2014.6873946 |
| Popis: |
Al/nanocrystalline CeOx/Si/Al structures have been obtained using flash evaporation method. The effect of technological factors (substrate temperature and type) on the CeO x films microstructure as well as on photoelectric properties of the Al/nc-CeOx/Si/Al structures has been investigated. The method of high-frequency C-V characteristics was used to study the cerium oxide film/singlecrystalline silicon interface. On the basis of the synthesized nanocrystalline (nc) CeO x films obtained by the flash method we have developed new types of heterojunction photodetectors with enhanced photosensitivity (330 uA/lm·V) in the visible range. A stable metal/nc-CeOx/Si structures have been received that reveal an interface state desity of 7·10 10 cm -2 eV -1 and a DC dielectric constant of about 15. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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