Physical and Electrical Characteristics of Methylsilane- and Trimethylsilane-Doped Low Dielectric Constant Chemical Vapor Deposited Oxides
| Autor: | Mao-Chieh Chen, Pei-Fen Chou, Zhi-Wen Shiung, Shwang-Ming Jeng, Zhen-Cheng Wu, Syun-Ming Jang, Chen-Hua Yu, Wei-Hao Wu, Chiu-Chih Chiang, Weng Chang, Mong-Song Liang |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment Doping Thermal decomposition Analytical chemistry Trimethylsilane Dielectric Nitride Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition Materials Chemistry Electrochemistry Thermal stability Methylsilane |
| Zdroj: | Journal of The Electrochemical Society. 148:F127 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.1369373 |
| Popis: | This work investigates the physical and electrical properties of two species of inorganic C-doped low dielectric constant (low-k) chemical vapor deposited (CVD) organosilicate glasses (OSGs, α-SiCO:H). They are both deposited by plasma-enhanced CVD (PECVD) processes using methylsilane [(CH 3 )SiH 3 , 1 MS]- and trimethylsilane [(CH 3 ) 3 SiH, 3 MS]-based gases as the reagents. and are designated as OSGI and OSG2, respectively, Experimental results indicate that the thermal stability temperature of OSG1 is 500°C, while that of OSG2 is 600°C, based on the results of thermal annealing for 30 min in an N 2 ambient. The deterioration of the low-k property in OSG1 is predominately duc to the thermal decomposition at temperatures above 500°C of methyl (-CH 3 ) groups, which are introduced to lower the density and polarizability of OSGs. For the Cu-gated oxide-sandwiched low-k dielectric metal-insulator-semiconductor (MIS) capacitors, Cu permeation was observed in both OSG1 and OSG2 after the MIS eapacitors were bias-temperature stressed at 150°C with an effective applied field of 0.8 MV/cm. Moreover, Cu appeared to drift more readily in OSGI than in OSG2. presumably hecause OSGI has a more porous and less cross-linked structure than OSG2. The Cu penetration can he mitigated by a thin nitride dielectric barrier. |
| Databáze: | OpenAIRE |
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